Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 -31% 更低的延时
更快的读取速度，GB/s

19.1 8.6

测试中的平均数值
更快的写入速度，GB/s

15.9 5.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 26
读取速度，GB/s

8.6 19.1
写入速度，GB/s

5.8 15.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1682 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Essencore Limited IM4AGU88N26-GIIHMB 16GB

Essencore Limited IM4AGU88N26-GIIHMB 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP512U72CP8-Y5 1GB

SK Hynix HYMP512U72CP8-Y5 1GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston 99U5665-004.A00G 4GB

Kingston 99U5665-004.A00G 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB