Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Samsung M378A5244CB0-CVF 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Samsung M378A5244CB0-CVF 4GB

需要考虑的原因
Samsung M378A5244CB0-CVF 4GB

报告一个错误

更快的读取速度，GB/s

16 12.4

测试中的平均数值
更快的写入速度，GB/s

12.3 9.6

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Samsung M378A5244CB0-CVF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.4 16.0
写入速度，GB/s

9.6 12.3
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2329 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMT64GX4M2C3600C18 32GB

Corsair CMT64GX4M2C3600C18 32GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Samsung M378B1G73DB0-CK0 8GB

Samsung M378B1G73DB0-CK0 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB