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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3733C17-4GVK 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3733C17-4GVK 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
G Skill Intl F4-3733C17-4GVK 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3733C17-4GVK 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
29
左右 -38% 更低的延时
更快的读取速度,GB/s
19
13.4
测试中的平均数值
更快的写入速度,GB/s
14.4
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3733C17-4GVK 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
21
读取速度,GB/s
13.4
19.0
写入速度,GB/s
9.0
14.4
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
3216
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
G Skill Intl F4-3733C17-4GVK 4GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3733C17-4GVK 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston KHX2400C14/16G 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Transcend Information TS2GSH64V4B 16GB
Corsair CMY8GX3M2A2666C10 4GB
Transcend Information TS2GLH64V6B 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology 78.CAGPW.40C0B 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-2800C15-16GVR 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C16-16GTZR 16GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Samsung M378B5273CH0-CH9 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
报告一个错误
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Bug description
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