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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
62
左右 -148% 更低的延时
更快的读取速度,GB/s
15.9
7.4
测试中的平均数值
更快的写入速度,GB/s
12.0
5.9
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
25
读取速度,GB/s
7.4
15.9
写入速度,GB/s
5.9
12.0
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1612
3023
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB RAM的比较
Corsair CMSO4GX3M1C1600C11 4GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C14-16GFX 16GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C18-8GTZ 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4800C20-16GTZR 16GB
G Skill Intl F5-5600J4040C16G 16GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905630-005.A00G 8GB
Kingston 99P5471-016.A00LF 8GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung 1600 CL10 Series 8GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMK32GX4M2D3200C16 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 99U5700-027.A00G 8GB
Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology BL8G32C16U4R.8FE 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMD128GX4M8B3200C16 16GB
报告一个错误
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Bug description
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