RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Corsair CMK16GX4M2D2666C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Corsair CMK16GX4M2D2666C16 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
Corsair CMK16GX4M2D2666C16 8GB 需要考虑的原因
Corsair CMK16GX4M2D2666C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    61 left arrow 62
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Corsair CMK16GX4M2D2666C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 61
  • 读取速度，GB/s
    7.4 left arrow 17.9
  • 写入速度，GB/s
    5.9 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 2136

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Corsair CMK16GX4M2D2666C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMK16GX4M2D2666C16 8GB
Corsair CMK16GX4M2D2666C16 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
V-Color Technology Inc. TA48G32S816SK 8GB
V-Color Technology Inc. TA48G32S816SK 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Kingston HP37D4U1S8ME-16XR 16GB
Kingston HP37D4U1S8ME-16XR 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Mushkin MRA4S300GJJM16G 16GB
Mushkin MRA4S300GJJM16G 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Apacer Technology 78.CAGMR.40C0B 8GB
Apacer Technology 78.CAGMR.40C0B 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 99U5665-001.A00G 4GB
Kingston 99U5665-001.A00G 4GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kingston 9965589-035.D00G 16GB
Kingston 9965589-035.D00G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Apacer Technology 78.C2GFP.C700B 8GB
Apacer Technology 78.C2GFP.C700B 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMW32GX4M4K4000C19 8GB
Corsair CMW32GX4M4K4000C19 8GB
内存RAM