Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

G Skill Intl F4-2933C14-8GFX 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-2933C14-8GFX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

低于PassMark测试中的延时，ns

62 64

左右 3% 更低的延时

G Skill Intl F4-2933C14-8GFX 8GB

需要考虑的原因
G Skill Intl F4-2933C14-8GFX 8GB

报告一个错误

更快的读取速度，GB/s

17.3 7.4

测试中的平均数值
更快的写入速度，GB/s

10.0 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

G Skill Intl F4-2933C14-8GFX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 64
读取速度，GB/s

7.4 17.3
写入速度，GB/s

5.9 10.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1612 2181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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SK Hynix HMA81GR7MFR8N-UH 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMK64GX4M8X3600C18 8GB

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A-DATA Technology VDQVE1B16 2GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

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Kingston KH280C14D4/8X 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB