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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M471A1K43EB1-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M471A1K43EB1-CWE 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
Samsung M471A1K43EB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 62
    左右 -35% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M471A1K43EB1-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 46
  • 读取速度，GB/s
    7.4 left arrow 16.0
  • 写入速度，GB/s
    5.9 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 2660

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Samsung M471A1K43EB1-CWE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Crucial Technology CB16GS2666.C8ET 16GB
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A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
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SK Hynix HMT31GR7CFR4C-PB 8GB
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SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
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Nanya Technology NT2GC64B8HC0NS-CG 2GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMN32GX4M2Z4600C18 16GB
Corsair CMN32GX4M2Z4600C18 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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G Skill Intl F4-2133C15-8GRB 8GB
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