Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

G Skill Intl F4-3200C14-16GTZSK 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs G Skill Intl F4-3200C14-16GTZSK 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分

G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

报告一个错误

G Skill Intl F4-3200C14-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更快的读取速度，GB/s

19 10.9

测试中的平均数值
更快的写入速度，GB/s

17.1 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

G Skill Intl F4-3200C14-16GTZSK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

10.9 19.0
写入速度，GB/s

7.1 17.1
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1668 4022

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

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Corsair CMT16GX4M2C3200C16 8GB

Corsair CMT16GX4M2C3200C16 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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Kingston KVT8FP-HYC 4GB

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB