Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB vs Kingston HX316C10F/4 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

总分

Kingston HX316C10F/4 4GB

Kingston HX316C10F/4 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 67

左右 61% 更低的延时
更快的读取速度，GB/s

12.8 6.3

测试中的平均数值
更快的写入速度，GB/s

8.3 5.0

测试中的平均数值

Kingston HX316C10F/4 4GB

需要考虑的原因
Kingston HX316C10F/4 4GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Kingston HX316C10F/4 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

26 67
读取速度，GB/s

12.8 6.3
写入速度，GB/s

8.3 5.0
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2186 1247

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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SK Hynix V-GeN D4H8GL26A8TX5 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA84GR7AFR4N-UH 32GB

Kingston 99U5474-010.A00LF 2GB

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB

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AMD AE34G1601U1 4GB

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