Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CM4X4GF2400C16N2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CM4X4GF2400C16N2 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 76

左右 68% 更低的延时
更快的读取速度，GB/s

16 13.5

测试中的平均数值
更快的写入速度，GB/s

12.5 7.3

测试中的平均数值

Corsair CM4X4GF2400C16N2 4GB

需要考虑的原因
Corsair CM4X4GF2400C16N2 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CM4X4GF2400C16N2 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 76
读取速度，GB/s

16.0 13.5
写入速度，GB/s

12.5 7.3
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 1587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Ramaxel Technology RMSA3260MH78HAF-2666 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Apacer Technology 78.CAGR9.40C0B 8GB

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX4M2B3000C15 8GB

Qimonda 72T128420EFA3SB2 1GB

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