Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMD16GX4M4B3200C14 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMD16GX4M4B3200C14 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 14% 更低的延时
更快的读取速度，GB/s

16 13

测试中的平均数值
更快的写入速度，GB/s

12.5 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Corsair CMD16GX4M4B3200C14 4GB

需要考虑的原因
Corsair CMD16GX4M4B3200C14 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMD16GX4M4B3200C14 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 28
读取速度，GB/s

16.0 13.0
写入速度，GB/s

12.5 9.2
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2586

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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Samsung M393A1G40DB0-CPB 8GB

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A-DATA Technology AD4U240038G17-BHYA 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

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A-DATA Technology DOVF1B163G2G 2GB

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AMD AE34G1601U1 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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Dust Leopard DDR4-2400 C17 8GB 8GB