RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Essencore Limited IM44GU48N24-FFFHA0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Essencore Limited IM44GU48N24-FFFHA0 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
需要考虑的原因
Essencore Limited IM44GU48N24-FFFHA0 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
24
左右 -9% 更低的延时
更快的读取速度,GB/s
18.1
16
测试中的平均数值
更快的写入速度,GB/s
13.9
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
22
读取速度,GB/s
16.0
18.1
写入速度,GB/s
12.5
13.9
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
3091
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Essencore Limited IM44GU48N24-FFFHA0 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Golden Empire CL15-15-15 D4-2400 4GB
Samsung M393B2G70BH0-CH9 16GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston 9965525-140.A00LF 8GB
Kingston KVR24N17S8/4 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KF2666C15S4/8G 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMK16GX4M2B3200C14 8GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMK16GX4M2D3600C16 8GB
Corsair CML8GX3M2A1866C9 4GB
Kingston 9905630-039.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMW32GX4M2C3000C15 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK16GX4M2B3600C18 8GB
Kingston KVR800D2S6/4G 4GB
SK Hynix HYMP112S64CP6-S6 1GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
报告一个错误
×
Bug description
Source link