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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-8GFX 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2133C15-8GFX 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2133C15-8GFX 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更快的写入速度,GB/s
12.5
11.4
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2133C15-8GFX 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
24
左右 -4% 更低的延时
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-8GFX 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
23
读取速度,GB/s
16.0
16.0
写入速度,GB/s
12.5
11.4
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2816
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2133C15-8GFX 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C15-4GRR 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Apacer Technology 78.C2GFP.C700B 8GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMD32GX4M4B3866C18 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C16-8GTZR 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Maxsun MSD48G32Q3 8GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA451U7AFR8N-TF 4GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Apacer Technology 78.01GA0.9K5 1GB
Mushkin MRA4S320GJJM32G 32GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-5066C20-8GVK 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-4000C18-16GTRG 16GB
报告一个错误
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Bug description
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