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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C16-8GRSB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2400C16-8GRSB 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.6
    测试中的平均数值
G Skill Intl F4-2400C16-8GRSB 8GB 需要考虑的原因
G Skill Intl F4-2400C16-8GRSB 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C16-8GRSB 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 24
  • 读取速度，GB/s
    16.0 left arrow 15.5
  • 写入速度，GB/s
    12.5 left arrow 9.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2442

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

G Skill Intl F4-2400C16-8GRSB 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Apacer Technology 78.CAGMR.40C0B 8GB
Apacer Technology 78.CAGMR.40C0B 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMD64GX4M8A2666C15 8GB
Corsair CMD64GX4M8A2666C15 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-3000C15-8GVRB 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Heoriady M378A1K43BB2-CTD 8GB
Heoriady M378A1K43BB2-CTD 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM