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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C18-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C18-8GTZR 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 14% 更低的延时
G Skill Intl F4-2666C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-2666C18-8GTZR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.1 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 12.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 28
  • 读取速度，GB/s
    16.0 left arrow 17.1
  • 写入速度，GB/s
    12.5 left arrow 14.1
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3379

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

G Skill Intl F4-2666C18-8GTZR 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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