Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2933C16-8GFX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2933C16-8GFX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 33% 更低的延时
更快的写入速度，GB/s

12.5 12.4

测试中的平均数值

G Skill Intl F4-2933C16-8GFX 8GB

需要考虑的原因
G Skill Intl F4-2933C16-8GFX 8GB

报告一个错误

更快的读取速度，GB/s

17.4 16

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2933C16-8GFX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 36
读取速度，GB/s

16.0 17.4
写入速度，GB/s

12.5 12.4
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 3552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KHX2400C14S4/8G 8GB

Kingston KHX2400C14S4/8G 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD32GX4M4C3200C16-R 8GB

Corsair CMD32GX4M4C3200C16-R 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB