RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C14-8GTZR 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C14-8GTZR 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-4000C14-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 11% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-4000C14-8GTZR 8GB
报告一个错误
更快的读取速度,GB/s
24.7
16
测试中的平均数值
更快的写入速度,GB/s
19.9
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C14-8GTZR 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
27
读取速度,GB/s
16.0
24.7
写入速度,GB/s
12.5
19.9
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
4174
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C14-8GTZR 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C14-8GTZR 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-3000C15-4GRK 4GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Kingston KVR16N11/8-SP 8GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3600C17-8GTZR 8GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4000C15-8GVK 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK128GX4M4E3200C16 32GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA451U6AFR8N-TF 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
A-DATA Technology DQKD1A08 1GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Corsair CMV4GX3M1B1600C11 4GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-8GIS 8GB
报告一个错误
×
Bug description
Source link