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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 8% 更低的延时
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.9 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 26
  • 读取速度，GB/s
    16.0 left arrow 18.9
  • 写入速度，GB/s
    12.5 left arrow 16.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3866

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
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A-DATA Technology DOVF1B163G2G 2GB
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A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
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Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
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G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
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Micron Technology AFLD48VH1P 8GB
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Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
AMD R748G2400U2S 8GB
AMD R748G2400U2S 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
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Corsair CMSX16GX4M2A3000C16 8GB
内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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G Skill Intl F4-3600C17-8GVK 8GB
内存RAM
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Corsair CMX8GX3M2A2000C9 4GB
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Kingston KF2666C16D4/8G 8GB
内存RAM
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Unifosa Corporation GU502203EP0201 1GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
Kingston CBD32D4S2S1ME-8 8GB
Kingston CBD32D4S2S1ME-8 8GB
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SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
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Kingston KHX2666C16D4/32GX 32GB
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