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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire CL15-15-15 D4-2133 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Golden Empire CL15-15-15 D4-2133 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 34
    左右 29% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Golden Empire CL15-15-15 D4-2133 8GB 需要考虑的原因
Golden Empire CL15-15-15 D4-2133 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire CL15-15-15 D4-2133 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 34
  • 读取速度，GB/s
    16.0 left arrow 14.8
  • 写入速度，GB/s
    12.5 left arrow 10.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2759

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Golden Empire CL15-15-15 D4-2133 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Golden Empire CL15-15-15 D4-2133 8GB
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Samsung M395T2863QZ4-CF76 1GB
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TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Chun Well Technology Holding Limited CL18-22-22 D4-3600
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Kingston 99U5458-008.A00LF 4GB
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SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
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Samsung M393B5170FH0-CK0 4GB
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内存RAM
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Samsung M391B5673FH0-CH9 2GB
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A-DATA Technology DQKD1A08 1GB
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Samsung M393A1K43BB0-CRC 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
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