RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR32D4S2S8ME-16 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston ACR32D4S2S8ME-16 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 49
    左右 51% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 10.7
    测试中的平均数值
Kingston ACR32D4S2S8ME-16 16GB 需要考虑的原因
Kingston ACR32D4S2S8ME-16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.1 left arrow 16
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR32D4S2S8ME-16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 49
  • 读取速度，GB/s
    16.0 left arrow 17.1
  • 写入速度，GB/s
    12.5 left arrow 10.7
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2668

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston ACR32D4S2S8ME-16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4000C16-8GVK 8GB
G Skill Intl F4-4000C16-8GVK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR32D4S2S8ME-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HX432C15PB3/16 16GB
Kingston HX432C15PB3/16 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMD16GX4M4A2800C16 4GB
Corsair CMD16GX4M4A2800C16 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMD32GX4M4B3000C15 8GB
Corsair CMD32GX4M4B3000C15 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
内存RAM