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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston DT3B122GX4GBV-800I 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston DT3B122GX4GBV-800I 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston DT3B122GX4GBV-800I 4GB

Kingston DT3B122GX4GBV-800I 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 91
    左右 74% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5600
    左右 3.43% 更高的带宽
Kingston DT3B122GX4GBV-800I 4GB 需要考虑的原因
Kingston DT3B122GX4GBV-800I 4GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,091.8 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston DT3B122GX4GBV-800I 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR2
  • PassMark中的延时，ns
    24 left arrow 91
  • 读取速度，GB/s
    16.0 left arrow 3,796.3
  • 写入速度，GB/s
    12.5 left arrow 2,091.8
  • 内存带宽，mbps
    19200 left arrow 5600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC2-5600, SSTL 1.8V, CAS Supported:
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow no data
  • 排名PassMark (越多越好)
    2925 left arrow 751

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston DT3B122GX4GBV-800I 4GB RAM的比较

G Skill Intl F4-3200C14-32GTRG 32GB
Kingston 9905711-002.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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