Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston KHX3200C18D4/16G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston KHX3200C18D4/16G 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 11% 更低的延时

Kingston KHX3200C18D4/16G 16GB

需要考虑的原因
Kingston KHX3200C18D4/16G 16GB

报告一个错误

更快的读取速度，GB/s

19.1 16

测试中的平均数值
更快的写入速度，GB/s

15.2 12.5

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston KHX3200C18D4/16G 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 27
读取速度，GB/s

16.0 19.1
写入速度，GB/s

12.5 15.2
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2925 3737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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SK Hynix HMA81GR7MFR8N-UH 8GB

Essencore Limited KD48GU88C-26N1600 8GB

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Kingston 9905678-012.A00G 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Samsung M378A1K43CB2-CRC 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB