Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston XRMWRN-MIE2 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston XRMWRN-MIE2 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 27% 更低的延时

Kingston XRMWRN-MIE2 16GB

需要考虑的原因
Kingston XRMWRN-MIE2 16GB

报告一个错误

更快的读取速度，GB/s

17.1 16

测试中的平均数值
更快的写入速度，GB/s

13.4 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston XRMWRN-MIE2 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 33
读取速度，GB/s

16.0 17.1
写入速度，GB/s

12.5 13.4
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 3286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB