Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston XW21KG-MIE-NX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston XW21KG-MIE-NX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 38% 更低的延时
更快的写入速度，GB/s

12.5 10.4

测试中的平均数值

Kingston XW21KG-MIE-NX 8GB

需要考虑的原因
Kingston XW21KG-MIE-NX 8GB

报告一个错误

更快的读取速度，GB/s

16.5 16

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston XW21KG-MIE-NX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 39
读取速度，GB/s

16.0 16.5
写入速度，GB/s

12.5 10.4
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 2680

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CM4X8GE3000C15K4 8GB

Corsair CM4X8GE3000C15K4 8GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4DFD8266.M16FR 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB