Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 9ASF1G72PZ-2G3B1 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 58

左右 59% 更低的延时
更快的读取速度，GB/s

16 9.7

测试中的平均数值
更快的写入速度，GB/s

12.5 7.5

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G3B1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G3B1 8GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 58
读取速度，GB/s

16.0 9.7
写入速度，GB/s

12.5 7.5
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2172

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200