RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology CT4G4DFS8213.8FA11 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology CT4G4DFS8213.8FA11 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Micron Technology CT4G4DFS8213.8FA11 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
35
左右 31% 更低的延时
更快的读取速度,GB/s
16
15
测试中的平均数值
更快的写入速度,GB/s
12.5
12.0
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Micron Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology CT4G4DFS8213.8FA11 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
35
读取速度,GB/s
16.0
15.0
写入速度,GB/s
12.5
12.0
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2654
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology CT4G4DFS8213.8FA11 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-4GIS 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology CT4G4DFS8213.8FA11 4GB
Kingston 9965516-430.A00G 16GB
Transcend Information JM2400HSB-8G 8GB
AMD R5316G1609U2K 8GB
Kingston MSI24D4S7S8S8-8 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMK128GX4M4A2400C16 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Maxsun MSD44G24Q3 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-4000C19-4GTZ 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Corsair CM4B16G2L2666A18K2 16GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905743-034.A00G 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMSX32GX4M2A3200C22 16GB
报告一个错误
×
Bug description
Source link