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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Team Group Inc. TEAMGROUP-SD4-2133 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Team Group Inc. TEAMGROUP-SD4-2133 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
45
左右 47% 更低的延时
更快的读取速度,GB/s
16
9.4
测试中的平均数值
更快的写入速度,GB/s
12.5
8.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Team Group Inc. TEAMGROUP-SD4-2133 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
45
读取速度,GB/s
16.0
9.4
写入速度,GB/s
12.5
8.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
1550
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Micron Technology AFLD48EH1P 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A1K43CB1-CTD 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Asgard VMA41UH-MEC1U2AW1 16GB
Samsung M378B5173BH0-CH9 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Samsung M471A5244CB0-CWE 4GB
Kingston KHX3600C18D4/32GX 32GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
报告一个错误
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