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Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3866C18-8GTZ 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB vs G Skill Intl F4-3866C18-8GTZ 8GB

总分
star star star star star
Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

差异 规格 评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB 需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
G Skill Intl F4-3866C18-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.2 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 6.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3866C18-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    10.1 left arrow 20.2
  • 写入速度，GB/s
    6.2 left arrow 13.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1411 left arrow 3241

Kingmax Semiconductor FLFE85F-C8KL9 2GB RAM的比较

CompuStocx (CSX) 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB

G Skill Intl F4-3866C18-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
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内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Kingston KY7N41-MIE 8GB
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内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kingston KF2933C17S4/16G 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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InnoDisk Corporation M4S0-8GS1NCIK 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
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Kingston CBD24D4U7S8MA-8 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
SK Hynix HMAA2GS6AJR8N-XN 16GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
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