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Kingmax Semiconductor FLFE85F-C8KL9 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

总分
star star star star star
Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分
star star star star star
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

差异 规格 评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB 需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB
报告一个错误
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.4 left arrow 6.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    10.1 left arrow 17.6
  • 写入速度，GB/s
    6.2 left arrow 17.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1411 left arrow 3845

Kingmax Semiconductor FLFE85F-C8KL9 2GB RAM的比较

CompuStocx (CSX) 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953EZ3-CF7 1GB
Samsung M3 91T2953EZ3-CF7 1GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C
Corsair CMY8GX3M2A2400C11 4GB
Corsair CMY8GX3M2A2400C11 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
AMD R748G2606U2S 8GB
AMD R748G2606U2S 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
内存RAM