Kingmax Semiconductor FLFE85F-C8WL9 2GB vs Kingston 9965596-035.B00G 4GB

总分

Kingmax Semiconductor FLFE85F-C8WL9 2GB

Kingmax Semiconductor FLFE85F-C8WL9 2GB

总分

Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8WL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8WL9 2GB

报告一个错误

Kingston 9965596-035.B00G 4GB

需要考虑的原因
Kingston 9965596-035.B00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 70

左右 -84% 更低的延时
更快的读取速度，GB/s

7.6 6.4

测试中的平均数值
更快的写入速度，GB/s

7.7 4.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8WL9 2GB

Kingston 9965596-035.B00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

70 38
读取速度，GB/s

6.4 7.6
写入速度，GB/s

4.5 7.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1071 1827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology CT4G4DFS8266.M8FG 4GB

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Corsair CMR32GX4M2A2666C16 16GB

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Corsair CM4X8GD3200C16K4 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMK64GX4M82800C14 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

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Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB