Kingmax Semiconductor FLGF65F-C8KJ9A 4GB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

总分

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

总分

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

差异规格评论

差异

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

需要考虑的原因
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 19% 更低的延时

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

需要考虑的原因
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

报告一个错误

更快的读取速度，GB/s

18 15.1

测试中的平均数值
更快的写入速度，GB/s

15.1 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

22 27
读取速度，GB/s

15.1 18.0
写入速度，GB/s

10.0 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 3711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM3X8GA2400C11Y2R 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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G Skill Intl F4-3200C14-32GTRS 32GB

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Samsung M391A1G43EB1-CPB 8GB

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Essencore Limited IM48GU88N24-FFFHAB 8GB

Essencore Limited IM48GU88N24-FFFHAB 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 9905599-025.A00G 8GB

Kingston 9905599-025.A00G 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

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Samsung M378B5273EB0-CK0 4GB

G Skill Intl F4-2800C16-8GVR 8GB

G Skill Intl F4-2800C16-8GVR 8GB