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Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M471A1K43CBCBCRC 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Samsung M471A1K43CBCBCRC 8GB

总分
star star star star star
Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分
star star star star star
Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

差异 规格 评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB 需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB
报告一个错误
Samsung M471A1K43CBCBCRC 8GB 需要考虑的原因
Samsung M471A1K43CBCBCRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 61
    左右 -61% 更低的延时
  • 更快的读取速度，GB/s
    9.3 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.1 left arrow 1,670.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M471A1K43CBCBCRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 38
  • 读取速度，GB/s
    3,529.3 left arrow 9.3
  • 写入速度，GB/s
    1,670.4 left arrow 6.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    517 left arrow 1493

Kingmax Semiconductor KLDD48F-B8KU5 1GB RAM的比较

Kingmax Semiconductor KLDD48F-A8KB5 1GB
Patriot Memory (PDP Systems) PSD21G800816 1GB

Samsung M471A1K43CBCBCRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-4000C18-8GTZKK 8GB
G Skill Intl F4-4000C18-8GTZKK 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2800C16-4GVR 4GB
G Skill Intl F4-2800C16-4GVR 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Essencore Limited KD48GU881-26N190A 8GB
Essencore Limited KD48GU881-26N190A 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK16GX4M2B2800C14 8GB
Corsair CMK16GX4M2B2800C14 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Transcend Information AQD-D4U4GN21-SG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
内存RAM