Kingmax Semiconductor KLDE88F-B8MO5 2GB vs G Skill Intl F4-3200C14-16GTZ 16GB

总分

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

总分

G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

差异规格评论

差异

Kingmax Semiconductor KLDE88F-B8MO5 2GB

需要考虑的原因
Kingmax Semiconductor KLDE88F-B8MO5 2GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值
更快的写入速度，GB/s

2,254.2 15.0

测试中的平均数值

G Skill Intl F4-3200C14-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 53

左右 -77% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KLDE88F-B8MO5 2GB

G Skill Intl F4-3200C14-16GTZ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 30
读取速度，GB/s

4,753.1 17.7
写入速度，GB/s

2,254.2 15.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

776 3593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2933C16-8GFX 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Apacer Technology 76.C102G.D170B 8GB

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Corsair CMK64GX5M2B5200C40 32GB

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Corsair CMK16GX4M4B3200C15 4GB

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A-DATA Technology VDQVE1B16 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-3200C16-8GTZB 8GB

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Patriot Memory (PDP Systems) PSD38G16002 8GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

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Kingston 99U5474-037.A00LF 4GB

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SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

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Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB