Kingmax Semiconductor KSCE88F-B8MO5 2GB vs Crucial Technology BLS16G4D240FSE.16FBD 16GB

总分

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

总分

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

差异规格评论

差异

Kingmax Semiconductor KSCE88F-B8MO5 2GB

需要考虑的原因
Kingmax Semiconductor KSCE88F-B8MO5 2GB

报告一个错误

更快的读取速度，GB/s

2 15.4

测试中的平均数值

Crucial Technology BLS16G4D240FSE.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 66

左右 -89% 更低的延时
更快的写入速度，GB/s

9.9 1,167.9

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 35
读取速度，GB/s

2,885.7 15.4
写入速度，GB/s

1,167.9 9.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

284 2765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M47472K43DB1-CTD 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT8G4DFS6266.M4FE 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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AMD R7S44G2606U1S 4GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

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Crucial Technology BLE8G4D26AFEA.16FAD 8GB