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Kingston 39P5429-006.AO01 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

Kingston 39P5429-006.AO01 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

总分
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Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

总分
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Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

差异 规格 评论

差异

Kingston 39P5429-006.AO01 2GB 需要考虑的原因
Kingston 39P5429-006.AO01 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 56
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    6 left arrow 4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的写入速度，GB/s
    2,169.5 left arrow 1,892.9
    测试中的平均数值

规格

完整的技术规格清单
Kingston 39P5429-006.AO01 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    44 left arrow 56
  • 读取速度，GB/s
    6,181.5 left arrow 4,680.1
  • 写入速度，GB/s
    1,892.9 left arrow 2,169.5
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    851 left arrow 779

Kingston 39P5429-006.AO01 2GB RAM的比较

G Skill Intl F4-3200C16-32GTRG 32GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-Y5 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 39P5429-006.AO01 2GB
Kingston 39P5429-006.AO01 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8
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