Kingston 9905316-106.A02LF 1GB vs AMD R744G2400U1S 4GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值
更快的写入速度，GB/s

2,475.5 11.6

测试中的平均数值

AMD R744G2400U1S 4GB

需要考虑的原因
AMD R744G2400U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 56

左右 -155% 更低的延时
更高的内存带宽，mbps

19200 8800

左右 2.18 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

AMD R744G2400U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 22
读取速度，GB/s

4,878.3 16.7
写入速度，GB/s

2,475.5 11.6
内存带宽，mbps

8800 19200

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

598 2862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU32GX4M4D3000C16 8GB

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Kingston KHX1866C9D3/8GX 8GB

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Corsair CMK16GX4M2E3200C16 8GB

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Team Group Inc. TEAMGROUP-UD4-2666 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung DDR3 8GB 1600MHz 8GB

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Teclast TLD416G26A30 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB