Kingston 9905316-106.A02LF 1GB vs Samsung M378A1K43CB2-CTD 8GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值
更快的写入速度，GB/s

2,475.5 12.0

测试中的平均数值

Samsung M378A1K43CB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43CB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 56

左右 -75% 更低的延时
更高的内存带宽，mbps

21300 8800

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

Samsung M378A1K43CB2-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 32
读取速度，GB/s

4,878.3 15.9
写入速度，GB/s

2,475.5 12.0
内存带宽，mbps

8800 21300

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

598 2952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFRA32A.C8FB 16GB

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G Skill Intl F4-3466C16-16GTZSW 16GB

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Crucial Technology BLS16G4D26BFSB.16FBR 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

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Kingston 9905471-002.A00LF 2GB

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Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB