Kingston 9905403-061.A00LF 2GB vs G Skill Intl F4-3866C18-4GVK 4GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

G Skill Intl F4-3866C18-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3866C18-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 57

左右 -200% 更低的延时
更快的读取速度，GB/s

19.2 6.8

测试中的平均数值
更快的写入速度，GB/s

13.5 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3866C18-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 19
读取速度，GB/s

6.8 19.2
写入速度，GB/s

5.5 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Golden Empire CL14-16-16 D4-2400 16GB

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G Skill Intl F4-3600C14-16GTRG 16GB