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Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3600C19-16GTRG 16GB

Kingston 9905403-174.A00LF 2GB vs G Skill Intl F4-3600C19-16GTRG 16GB

总分
star star star star star
Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

总分
star star star star star
G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

差异 规格 评论

差异

Kingston 9905403-174.A00LF 2GB 需要考虑的原因
Kingston 9905403-174.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 25
    左右 4% 更低的延时
G Skill Intl F4-3600C19-16GTRG 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GTRG 16GB
报告一个错误
  • 更快的读取速度，GB/s
    19.4 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 25
  • 读取速度，GB/s
    14.2 left arrow 19.4
  • 写入速度，GB/s
    9.5 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2222 left arrow 3933

Kingston 9905403-174.A00LF 2GB RAM的比较

Crucial Technology CT25664BA1339.M8FK 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB

G Skill Intl F4-3600C19-16GTRG 16GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
AMD R538G1601U2S-UO 8GB
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Crucial Technology CT8G4DFS8213.C8FBD1 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CM4B8G1J2800K14K 8GB
Corsair CM4B8G1J2800K14K 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
内存RAM