Kingston 9905403-444.A00LF 4GB vs Crucial Technology CT16G4DFD8266.M16FH 16GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

Crucial Technology CT16G4DFD8266.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 35

左右 -46% 更低的延时
更快的读取速度，GB/s

17 11.5

测试中的平均数值
更快的写入速度，GB/s

13.7 6.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 24
读取速度，GB/s

11.5 17.0
写入速度，GB/s

6.5 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1994 3230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT8G4SFS824A.C8FDR1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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Kingston 9905624-010.A00G 4GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N