Kingston 9905471-076.A00LF 8GB vs Micron Technology 16ATF2G64AZ-3G2E1 16GB

总分

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

总分

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

差异规格评论

差异

Kingston 9905471-076.A00LF 8GB

需要考虑的原因
Kingston 9905471-076.A00LF 8GB

报告一个错误

Micron Technology 16ATF2G64AZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的读取速度，GB/s

18.6 13.9

测试中的平均数值
更快的写入速度，GB/s

15.3 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-076.A00LF 8GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

13.9 18.6
写入速度，GB/s

8.4 15.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2322 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Avant Technology W641GU42J9266NB 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Apacer Technology 78.C1GS7.AUW0B 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Crucial Technology BLS4G4D240FSA.8FARG 4GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CMK32GX4M4A2400C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB