Kingston 9905584-016.A00LF 4GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异规格评论

差异

Kingston 9905584-016.A00LF 4GB

需要考虑的原因
Kingston 9905584-016.A00LF 4GB

报告一个错误

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 26

左右 -86% 更低的延时
更快的读取速度，GB/s

26.4 14.2

测试中的平均数值
更快的写入速度，GB/s

19.8 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905584-016.A00LF 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 14
读取速度，GB/s

14.2 26.4
写入速度，GB/s

8.5 19.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2277 4362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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Mushkin 991988 (996988) 4GB

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Corsair CMK64GX4M82800C14 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Teikon TMA851S6CJR6N-VKSC 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB