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Kingston 9905678-012.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Kingston 9905678-012.A00G 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

总分
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Kingston 9905678-012.A00G 8GB

Kingston 9905678-012.A00G 8GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

差异 规格 评论

差异

Kingston 9905678-012.A00G 8GB 需要考虑的原因
Kingston 9905678-012.A00G 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 35
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    14.6 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 8.7
    测试中的平均数值

规格

完整的技术规格清单
Kingston 9905678-012.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 25
  • 读取速度，GB/s
    14.2 left arrow 14.6
  • 写入速度，GB/s
    8.7 left arrow 9.9
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2457 left arrow 2427

Kingston 9905678-012.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB RAM的比较

Kingston 8ATF1G64AZ-2G1B1 8GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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