Kingston 9965426-088.A00LF 4GB vs Samsung M393A2K43BB1-CRC 16GB

总分

Kingston 9965426-088.A00LF 4GB

Kingston 9965426-088.A00LF 4GB

总分

Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

差异规格评论

差异

Kingston 9965426-088.A00LF 4GB

需要考虑的原因
Kingston 9965426-088.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 53

左右 34% 更低的延时
更快的写入速度，GB/s

8.4 7.8

测试中的平均数值

Samsung M393A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M393A2K43BB1-CRC 16GB

报告一个错误

更快的读取速度，GB/s

10.4 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 9965426-088.A00LF 4GB

Samsung M393A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 53
读取速度，GB/s

8.3 10.4
写入速度，GB/s

8.4 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1934 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT102464BF160B-16F 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

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Nanya Technology NT1GT64U88D0BY-AD 1GB

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G Skill Intl F4-3200C15-8GVR 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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G Skill Intl F4-3333C16-16GTZB 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston 9905471-002.A00LF 2GB

Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB