Kingston 9965433-034.A00LF 4GB vs G Skill Intl F4-2400C15-8GFXR 8GB

总分

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

总分

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

差异规格评论

差异

Kingston 9965433-034.A00LF 4GB

需要考虑的原因
Kingston 9965433-034.A00LF 4GB

报告一个错误

G Skill Intl F4-2400C15-8GFXR 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GFXR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 -56% 更低的延时
更快的读取速度，GB/s

17.8 6.4

测试中的平均数值
更快的写入速度，GB/s

13.2 6.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-2400C15-8GFXR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 27
读取速度，GB/s

6.4 17.8
写入速度，GB/s

6.7 13.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1632 3337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMA82GS6DJR8N-VK 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Team Group Inc. TEAMGROUP-UD4-4300 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F4-3200C14-16GVR 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

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Samsung M378A1K43EB2-CWE 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

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Hewlett-Packard 7TE39AA#ABC 8GB