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Kingston 9965433-034.A00LF 4GB
Smart Modular SF4641G8CK8IWGKSEG 8GB

Kingston 9965433-034.A00LF 4GB vs Smart Modular SF4641G8CK8IWGKSEG 8GB

总分
star star star star star
Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

总分
star star star star star
Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

差异 规格 评论

差异

Kingston 9965433-034.A00LF 4GB 需要考虑的原因
Kingston 9965433-034.A00LF 4GB
报告一个错误
Smart Modular SF4641G8CK8IWGKSEG 8GB 需要考虑的原因
Smart Modular SF4641G8CK8IWGKSEG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9965433-034.A00LF 4GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    6.4 left arrow 13.5
  • 写入速度，GB/s
    6.7 left arrow 11.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1632 left arrow 2381

Kingston 9965433-034.A00LF 4GB RAM的比较

Kingston 9905584-017.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Smart Modular SF4641G8CK8IWGKSEG 8GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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G Skill Intl F3-14900CL8-4GBXM 4GB
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G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
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A-DATA Technology VDQVE1B16 2GB
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Samsung M474A1G43DB0-CPB 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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