Kingston 9965516-112.A00LF 16GB vs Crucial Technology CT8G4DFS832A.C8FJ 8GB

总分

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

差异规格评论

差异

Kingston 9965516-112.A00LF 16GB

需要考虑的原因
Kingston 9965516-112.A00LF 16GB

报告一个错误

Crucial Technology CT8G4DFS832A.C8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFS832A.C8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时
更快的读取速度，GB/s

17.9 9.1

测试中的平均数值
更快的写入速度，GB/s

15.1 9.9

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9965516-112.A00LF 16GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

9.1 17.9
写入速度，GB/s

9.9 15.1
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2279 3443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5773DH0-CH9 2GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB