Kingston 9965516-112.A00LF 16GB vs Roa Logic BV iGame DDR4 8G 3000 8GB

总分

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分

Roa Logic BV iGame DDR4 8G 3000 8GB

Roa Logic BV iGame DDR4 8G 3000 8GB

差异规格评论

差异

Kingston 9965516-112.A00LF 16GB

需要考虑的原因
Kingston 9965516-112.A00LF 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 81

左右 59% 更低的延时
更快的写入速度，GB/s

9.9 7.9

测试中的平均数值

Roa Logic BV iGame DDR4 8G 3000 8GB

需要考虑的原因
Roa Logic BV iGame DDR4 8G 3000 8GB

报告一个错误

更快的读取速度，GB/s

14.4 9.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 9965516-112.A00LF 16GB

Roa Logic BV iGame DDR4 8G 3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 81
读取速度，GB/s

9.1 14.4
写入速度，GB/s

9.9 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2279 1824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2800C14D4/8GX 8GB

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Samsung M378B5173EB0-CK0 4GB

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Nanya Technology NT2GC64B88G0NF-DI 2GB

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Dust Leopard DDR4-2400 C17 4GB 4GB

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Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-3200C14-8GFX 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB