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Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB

Kingston 9965525-018.A00LF 4GB vs Crucial Technology CT16G4SFD8266.M16FJ 16GB

总分
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分
star star star star star
Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

差异 规格 评论

差异

Kingston 9965525-018.A00LF 4GB 需要考虑的原因
Kingston 9965525-018.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 25% 更低的延时
Crucial Technology CT16G4SFD8266.M16FJ 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8266.M16FJ 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.3 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 36
  • 读取速度，GB/s
    13.2 left arrow 16.3
  • 写入速度，GB/s
    8.6 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 3068

Kingston 9965525-018.A00LF 4GB RAM的比较

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M2Z4000C18 8GB
Corsair CMK16GX4M2Z4000C18 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMK16GX4M2A2666C18 8GB
Corsair CMK16GX4M2A2666C18 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3000C14-16GTZR 16GB
G Skill Intl F4-3000C14-16GTZR 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston CBD24D4S7D8ME-16 16GB
Kingston CBD24D4S7D8ME-16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM