Kingston 9965525-018.A00LF 4GB vs Samsung M391B1G73QH0-CK0 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Samsung M391B1G73QH0-CK0 8GB

Samsung M391B1G73QH0-CK0 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Samsung M391B1G73QH0-CK0 8GB

需要考虑的原因
Samsung M391B1G73QH0-CK0 8GB

报告一个错误

更快的读取速度，GB/s

14.3 13.2

测试中的平均数值
更快的写入速度，GB/s

9.2 8.6

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Samsung M391B1G73QH0-CK0 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 36
读取速度，GB/s

13.2 14.3
写入速度，GB/s

8.6 9.2
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2196 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSO8GX4M1A2133C15 8GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Samsung M391B1G73QH0-CK0 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

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Corsair CMK16GX4M4A2133C15 4GB

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Kingston KVR16N11/8-SP 8GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

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Crucial Technology BL8G26C16U4W.8FD 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Kingston 99U5584-005.A00LF 4GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

Kingston KHX1600C9D3/4G 4GB

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston HP32D4U2S8ME-16 16GB

Kingston HP32D4U2S8ME-16 16GB